The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Jul. 19, 2019
Lapis Semiconductor Co., Ltd, Yokohama, JP;
Kenichi Furuta, Miyazaki, JP;
Toshifumi Kobe, Miyazaki, JP;
Toshiyuki Orita, Miyazaki, JP;
Tsuyoshi Inoue, Miyazaki, JP;
Tomoko Yonekura, Miyazaki, JP;
Masahiro Haraguchi, Miyazaki, JP;
Yoshinobu Takeshita, Miyazaki, JP;
Kiyofumi Kondo, Miyazaki, JP;
LAPIS Semiconductor Co., Ltd., Yokohama, JP;
Abstract
The semiconductor device includes a semiconductor substrate of first conductivity type including a cell area and a peripheral area surrounding cell area on a principal surface thereof, a first diffusion layer which is disposed in peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type, an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer, and a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and includes a linear portion having a first width and a curved portion having a portion with a second width greater than the first width.