The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Nov. 13, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kafai Lai, Poughkeepsie, NY (US);

Rasit Onur Topaloglu, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 29/40 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/02118 (2013.01); H01L 21/31144 (2013.01); H01L 29/401 (2013.01);
Abstract

A semiconductor structure includes a substrate and a first trench including a dielectric material disposed in the substrate. The first trench includes a transferred pattern of a first polymer of a directed self-assembly stack including the first polymer and a second polymer. The semiconductor structure also includes a second trench including a first vertical metal plate disposed in the substrate adjacent a first sidewall of the first trench, and a third trench including a second vertical metal plate disposed in the substrate adjacent a second sidewall of the first trench. The first vertical metal plate in the second trench, the dielectric material in the first trench, and the second vertical metal plate in the third trench provide a metal-insulator-metal vertical plate capacitor.


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