The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Apr. 30, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung Heo, Suwon-si, KR;

Takkyun Ro, Hwaseong-si, KR;

Kyung Bae Park, Hwaseong-si, KR;

Gyeongsu Park, Hwaseong-si, KR;

Joo Ho Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/30 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01); H01L 51/42 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 51/0023 (2013.01); H01L 51/4286 (2013.01); H01L 51/5209 (2013.01); H01L 51/5212 (2013.01); H01L 51/442 (2013.01); H01L 51/5234 (2013.01);
Abstract

Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiN, 0<x<1), silicon oxynitride (SiON, 0<y<0.5, 0<z≤1), P-doped silicon oxynitride (SiON:P, 0<y<0.5, 0<z≤1), and a combination thereof.


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