The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

May. 15, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Hideki Minari, Kanagawa, JP;

Shunsuke Maruyama, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/101 (2006.01); H01L 31/09 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14649 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 31/09 (2013.01); H01L 31/101 (2013.01); H01L 31/107 (2013.01);
Abstract

A photoelectric conversion device includes: a light absorption layer that has a light entrance surface and a compound semiconductor material; a first electrode provided for each of the pixels, in opposed relation to an opposite surface to the light entrance surface; a first semiconductor layer of a first conductive type, with a bandgap energy larger than bandgap energy of the light absorption layer and that is provided between the light absorption layer and the first electrode; a second semiconductor layer of a second conductive type, with a bandgap energy larger than the bandgap energy of the light absorption layer and that is provided between the first semiconductor layer and the light absorption layer; and a first diffusion region of the second conductive type, in which the first diffusion region is provided between adjacent ones of the pixels and across the second semiconductor layer and the light absorption layer.


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