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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10964724 B1

PDFFull Text
Date of Patent:
Mar. 30, 2021

Filed:

Aug. 22, 2018

Display device

Applicant:

Japan Display Inc., Minato-ku, JP;

Inventor:

Tatsuya Toda, Minato-ku, JP;

Assignee:

Japan Display Inc., Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Jack S Chen

Int. Cl.
CPC ...
H01L 27/12 (2006.01); G09G 3/36 (2006.01); G09G 3/3266 (2016.01); G09G 3/3233 (2016.01); H01L 23/532 (2006.01); H01L 27/32 (2006.01); G02F 1/1368 (2006.01); G02F 1/133 (2006.01); G02F 1/1335 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); G02F 1/13306 (2013.01); G02F 1/133512 (2013.01); G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); G09G 3/3677 (2013.01); H01L 23/5329 (2013.01); H01L 27/1222 (2013.01); H01L 27/1251 (2013.01); H01L 27/3272 (2013.01); H01L 29/7869 (2013.01); G02F 2201/123 (2013.01); H01L 27/3262 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01);
Abstract

The purpose of the present invention is to avoid an inflection point in Vg-Id characteristics of the Thin Film transistor, and to avoid step disconnection of the insulating film formed on the semiconductor layer in the display device. The concrete structure of the present invention is: a display device including a TFT substrate having a thin film transistor (TFT) comprising; the TFT having a channel width and a channel length, a gate insulating film formed on a gate electrode, a semiconductor layer formed on the gate insulating film, wherein the gate electrode, near its edge, has a first sloping surface having a first taper angle in a cross sectional view along the direction of the channel width, an edge of the semiconductor layer in the cross sectional view along the direction of the channel width lies on the first sloping surface of the gate electrode.

Find Patent Forward Citations

Toda, Tatsuya. (2021). Display device (U.S. Patent No. 10964724). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10964724

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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