The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Feb. 14, 2019
Toshiba Memory Corporation, Tokyo, JP;
Shinji Mori, Nagoya Aichi, JP;
Kazuhiro Matsuo, Kuwana Mie, JP;
Yuta Saito, Yokkaichi Mie, JP;
Keiichi Sawa, Yokkaichi Mie, JP;
Kazuhisa Matsuda, Yokkaichi Mie, JP;
Atsushi Takahashi, Yokkaichi Mie, JP;
Masayuki Tanaka, Yokkaichi Mie, JP;
Kenichiro Toratani, Kuwana Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor device comprises a substrate. A plurality of electrode layers and a plurality of insulating layers are formed in an alternating stack above the substrate. A semiconductor column extends through the plurality of electrode layers and the plurality of insulating layers. The semiconductor column comprises a single-crystal semiconductor material on an outer peripheral surface facing the electrode and insulating layers. First insulating films are formed between the semiconductor column and the electrode layers. The first insulating films are spaced from each other along the column length. Each first insulating film corresponds to one electrode layer. A charge storage layer is between each of the first insulating films and the electrode layers. A second insulating film is between the charge storage layer and each of the electrode layers.