The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

May. 22, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seol Un Yang, Suwon-si, KR;

Lak Gyo Jeong, Hwaseong-si, KR;

Hee Bum Hong, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1116 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes a substrate with a buffer region between first and second regions, the first region being a SRAM cell region, and the second region being a peripheral circuit region, first gate structures in a first direction on the first region and being spaced apart from each other in a second direction, second gate structures in the first direction on the second region and being spaced apart from each other in the second direction, the first and second gate structures being aligned with each other, a first insulating structure in the second direction on the buffer region between the first and the second regions along an entire length of each of the first and second regions in the second direction, and a second insulating structure on the first region and in contact with a part of the plurality of first gate structures.


Find Patent Forward Citations

Loading…