The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Sep. 10, 2018
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Irfan Rahim, Milpitas, CA (US);
Raminda Madurawe, Sunnyvale, CA (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 27/1116 (2013.01);
Abstract
In one embodiment, a method of forming a semiconductor device may include extending a gate conductor of a transistor to overlie a boundary of a well region in which the transistor is formed. The gate conductor may extend to make electrical contact with a gate conductor of a 2nd transistor that is formed external to the well region. A contact conductor may be applied to electrically and physically contact the first and 2nd gate conductors and to also overlie the boundary of the well region.