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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10964688 B1

PDFFull Text
Date of Patent:
Mar. 30, 2021

Filed:

Sep. 27, 2016

Semiconductor device

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Naoki Takahashi, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Dharti H Patel

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 27/04 (2006.01); H01L 23/34 (2006.01); H01L 23/00 (2006.01); H01L 27/07 (2006.01); H01L 29/06 (2006.01); H02H 5/04 (2006.01); B60R 16/033 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0296 (2013.01); H01L 21/822 (2013.01); H01L 21/8234 (2013.01); H01L 23/34 (2013.01); H01L 24/06 (2013.01); H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H01L 27/0292 (2013.01); H01L 27/04 (2013.01); H01L 27/06 (2013.01); H01L 27/0629 (2013.01); H01L 27/0711 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/78 (2013.01); H01L 29/7813 (2013.01); H02H 5/044 (2013.01); B60R 16/033 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06153 (2013.01);
Abstract

A semiconductor devicehas a power transistor Nof vertical structure and a temperature detection elementconfigured to detect abnormal heat generation by the power transistor N. The power transistor Nincludes a first electrodeformed on a first main surface side (front surface side) of a semiconductor substrate, a second electrodeformed on a second main surface side (rear surface side) of the semiconductor substrate, and pads-positioned unevenly on the first electrode. The temperature detection elementis formed at a location of the highest heat generation by the power transistor N, the location (near the padwhere it is easiest for current to be concentrated) being specified using the uneven positioning of the pads-

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