The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Jun. 05, 2020
Fuji Electric Co., Ltd., Kawasaki, JP;
Yoshiaki Toyoda, Matsumoto, JP;
Hideaki Katakura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
In a method of manufacturing a semiconductor device, selectively forming a first semiconductor region and a fourth semiconductor region to be away from each other in a surface layer of a first principal surface of a semiconductor substrate at a same impurity implantation and impurity diffusion process, selectively forming a second semiconductor region in the first semiconductor region and selectively forming a fifth semiconductor region in the fourth semiconductor region at a same impurity implantation and impurity diffusion process, and selectively forming a third semiconductor region that penetrates the first semiconductor region in a depth direction and selectively forming a sixth semiconductor region that penetrates the fourth semiconductor region in the depth direction at a same impurity implantation and impurity diffusion process.