The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Aug. 27, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Keiichi Niwa, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 24/17 (2013.01); H01L 21/76829 (2013.01); H01L 21/76852 (2013.01); H01L 24/09 (2013.01); H01L 24/11 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a substrate. An insulating film is provided above the substrate. Electrode pads are provided on the insulating film. Metallic bumps are respectively provided on surfaces of the electrode pads. A sidewall film comprises a metallic oxide or a metallic hydroxide provided on side surfaces of the metallic bumps. A barrier metal layer comprises first portions each provided between one of the metallic bumps and a corresponding one of the electrode pads and comprising a metal, and second portions provided at least on the electrode pads at a periphery of the metallic bumps and comprising a metallic oxide or a metallic hydroxide.


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