The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Jul. 29, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Baozhen Li, South Burlington, VT (US);

Chih-Chao Yang, Glenmont, NY (US);

Griselda Bonilla, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 23/481 (2013.01);
Abstract

An interconnect level is provided on a surface of a substrate that has improved crack stop capability. The interconnect level includes at least one wiring region including an electrically conductive structure embedded in an interconnect dielectric material having a dielectric constant of less than 4.0, and a crack stop region laterally surrounding the wiring region. The crack stop region includes a crack stop dielectric material having a dielectric constant greater than the dielectric constant of the interconnect dielectric material. The crack stop region may be devoid of any metallic structure, or it may contain a metallic structure. The metallic structure in the crack stop region, which is embedded in the crack stop dielectric material, may be composed of a same, or different, electrically conductive metal or metal alloy as the electrically conductive structure embedded in the interconnect dielectric material.


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