The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Dec. 27, 2018
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 49/02 (2006.01); H01L 23/532 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/291 (2013.01); H01L 23/5329 (2013.01); H01L 28/40 (2013.01); H01L 27/108 (2013.01);
Abstract
A semiconductor device includes a dielectric layer, a conductive layer formed over the dielectric layer, and a reduction sacrificial layer formed between the dielectric layer and the conductive layer, wherein the reduction sacrificial layer includes a first reduction sacrificial material having higher electronegativity than the dielectric layer, and a second reduction sacrificial material having higher electronegativity than the first reduction sacrificial material.