The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Nov. 21, 2017
Applicant:

Melexis Technologies NV, Tessenderlo, BE;

Inventors:

Gunnar Munder, Erfurt, DE;

Heiko Grimm, Waltershausen, DE;

Thomas Freitag, Plaue, DE;

Assignee:

MELEXIS TECHNOLOGIES NV, Tessenderlo, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01R 31/02 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); G01R 19/00 (2006.01); H01L 23/66 (2006.01); H01L 23/64 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); G01R 31/2858 (2013.01); G01R 31/2896 (2013.01); H01L 23/562 (2013.01); H01L 23/645 (2013.01); H01L 23/66 (2013.01); H01L 2223/6677 (2013.01);
Abstract

An edge crack monitoring system for an integrated circuit provided on a die, comprises a conductive trace comprising at least a first conductive path for allowing current in a first direction, and a second adjacent conductive path for allowing current in a second direction opposite to the first direction. Both adjacent conductive paths form at least one loop surrounding a semiconductor device on a die. The arrangement of the trace is adapted to provide compensation of EM interferences. The trace comprises two terminals being connectable to a detection circuit for detecting damages by generating a fault signal upon detection of disruption of the conductive trace due to a damage. The conductive trace comprises high resistance portions with a resistance of at least 1 kΩ, adapted for reducing self-resonance.


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