The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Feb. 14, 2018
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventor:
Yusuke Kasahara, Yokohama Kanagawa, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); H01L 21/31144 (2013.01); H01L 21/3086 (2013.01); H01L 21/3115 (2013.01);
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film that contains carbon on the first film, and processing the second film into a second pattern. The method further includes impregnating a metal element or a semiconductor element into the second pattern after the processing into the second pattern. The method further includes processing the first film into a first pattern using the second pattern after the impregnation of the metal element or the semiconductor element.