The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Mar. 08, 2019
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Ki Won Lee, Cheongju-si, KR;
Seok Man Hong, Seoul, KR;
Tae Hoon Kim, Seongnam-si, KR;
Hyung Dong Lee, Suwon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0038 (2013.01); G11C 13/003 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0033 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); G11C 2213/31 (2013.01); G11C 2213/32 (2013.01);
Abstract
A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.