The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Nov. 27, 2019
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Ho Seok Em, Hwaseong-si, KR;
Assignee:
SK hynix Inc., Incheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G11C 11/409 (2006.01); G11C 29/50 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 11/409 (2013.01); G11C 11/5642 (2013.01); G11C 29/50004 (2013.01); G11C 2029/5004 (2013.01);
Abstract
An operating method of a nonvolatile memory apparatus includes determining a first threshold voltage of a memory cell by using a first read voltage. The method includes determining a second threshold voltage of the memory cell by using a second read voltage having a different voltage level from the first read voltage based on write data and the first threshold voltage of the memory cell. The method includes writing the write data into the memory cell based on the first and second threshold voltages of the memory cell.