The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Sep. 11, 2019
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventor:
Ryousuke Takizawa, Kanagawa, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 11/1693 (2013.01);
Abstract
According to one embodiment, a semiconductor memory device, includes a memory cell comprising a switching element and a resistance change element; and a first circuit that applies a first voltage to the memory cell, places the memory cell into an ON state by applying a second voltage to the memory cell while applying the first voltage to the memory cell in parallel, generates a third voltage based on a resistance state of the resistance change element by performing first voltage application to perform a first readout on the memory cell in the ON state, writes first data into the memory cell.