The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Jan. 07, 2020
Applicant:

Inpower Llc, Galena, OH (US);

Inventor:

James D. Sullivan, Galena, OH (US);

Assignee:

InPower LLC, Lewis Center, OH (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/087 (2006.01); H03K 17/082 (2006.01); B66D 1/48 (2006.01); H01L 27/02 (2006.01); H02H 3/00 (2006.01); H02H 7/08 (2006.01); G01R 31/00 (2006.01); H02P 27/06 (2006.01); H02J 7/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); B66D 1/485 (2013.01); H01L 27/0274 (2013.01); H02H 3/087 (2013.01); G01R 31/006 (2013.01); H02H 3/00 (2013.01); H02H 7/08 (2013.01); H02J 7/00 (2013.01); H02P 27/06 (2013.01);
Abstract

A protection circuit for protecting a load, such as a winch motor, from an overcurrent as well as from a circuit fault including welded primary switch contacts and a failure of its MOS/FET component. A power MOS/FET is used as a current mirror for sensing load current. A secondary switch is series connected to control the primary switch. A control circuit including a programmable data processor controls the MOS/FET and the secondary switch and senses the current through the MOS/FET's secondary source terminal and senses the voltage at its primary source terminal. The programmable data processor determines whether an overcurrent exists by comparing the sensed power circuit current to a stored overcurrent value and also senses whether the contacts of the primary switch are welded closed and whether the MOS/FET has been damaged. Additional conditions are sensed. Application of power to the load is prevented when such conditions are detected.


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