The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Sep. 17, 2019
International Business Machines Corporation, Armonk, NY (US);
Noelia Vico Trivino, Zurich, CH;
Svenja Mauthe, Zurich, CH;
Philipp Staudinger, Zurich, CH;
Kirsten Emilie Moselund, Rueschlikon, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for fabricating an ellipsoidal or semi-ellipsoidal semiconductor structure includes steps of providing a semiconductor substrate and fabricating an ellipsoidal or semi-ellipsoidal cavity structure on the semiconductor substrate. The cavity structure encompasses a seed surface of the semiconductor substrate. The method includes a further step of growing the ellipsoidal or semi-ellipsoidal semiconductor structure within the ellipsoidal or semi-ellipsoidal cavity structure from the seed surface of the semiconductor substrate. Fabricating the cavity structure includes arranging a droplet comprising a sacrificial material on the semiconductor substrate, forming a layer of a coating material on the semiconductor substrate and the droplet, and selectively removing the sacrificial material of the droplet to expose the cavity structure.