The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Oct. 30, 2018
Applicants:
Fujitsu Limited, Kawasaki, JP;
Photonics Electronics Technology Research Association, Tokyo, JP;
Inventor:
Nobuaki Hatori, Tsukuba, JP;
Assignees:
FUJITSU LIMITED, Kawasaki, JP;
PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/12 (2021.01); G02B 6/42 (2006.01); H01S 5/028 (2006.01); H01S 5/34 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01S 5/026 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01S 5/028 (2013.01); H01S 5/0287 (2013.01); H01S 5/0288 (2013.01); H01S 5/12 (2013.01); H01S 5/1221 (2013.01); H01S 5/341 (2013.01); G02B 6/4206 (2013.01); G02B 6/4212 (2013.01); G02B 2006/12195 (2013.01); H01S 5/026 (2013.01); H01S 5/22 (2013.01); H01S 5/34313 (2013.01); H01S 2301/02 (2013.01); H01S 2301/163 (2013.01);
Abstract
A semiconductor light-emitting device includes an active layer including quantum dots, a diffraction grating, a low-reflectance film disposed at a light-emitting end of the active layer, and a high-reflectance film disposed at another end of the active layer and having an optical reflectance higher than an optical reflectance of the low-reflectance film.