The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Nov. 15, 2018
Cornell University, Ithaca, NY (US);
Sm Islam, Ithaca, NY (US);
Vladimir Protasenko, Ithaca, NY (US);
Huili Grace Xing, Ithaca, NY (US);
Debdeep Jena, Ithaca, NY (US);
Cornell University, Ithaca, NY (US);
Abstract
A polarization field assisted DUV-LED including a bottom substrate and a n-contact/injection layer formed on the bottom substrate. The n-contact/injection layer includes: a first region for accommodating strain relaxation; a second region for lateral access with a low sheet resistance and higher conductivity compared to the first region to minimize resistive losses and heat generation; and a third region of a graded vertical injection layer with low vertical resistance to minimize heat loss due to vertical resistance. The DUV-LED also includes a p-contact region, and an emitting active region between the n-contact/injection layer and the p-contact region. The injection of electrons and holes into quantum wells proceeds due to tunneling of electrons and holes under the barriers due to less than 2 nm thickness of barriers. This carrier injection lowers the Turn ON voltage of LEDs and reduces heat generation.