The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Aug. 14, 2018
Infineon Technologies Ag, Neubiberg, DE;
Chi Dong Nguyen, Munich, DE;
Andreas Rupp, Unterhaching, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a body region of a second conductivity type, a body contact region of the second conductivity type formed in the body region and having a higher average doping concentration than the body region, a source region of a first conductivity type opposite the second conductivity type formed in the body region adjacent the body contact region, a drift zone of the first conductivity type spaced apart from the source region by a section of the body region which forms a channel region of the semiconductor device, and a gate electrode configured to control the channel region. The body contact region extends under a majority of the source region in a direction towards the channel region and has a doping concentration of at least 1e18 cmunder the majority of the source region. Additional semiconductor device embodiments and methods of manufacture are described.