The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Mar. 08, 2019
Applicant:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Inventor:
Yang Gao, Milpitas, CA (US);
Assignee:
INFINEON TECHNOLOGIES AMERICAS CORP., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/41 (2006.01); H01L 29/66 (2006.01); H01L 27/11 (2006.01); H01L 29/417 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 29/0856 (2013.01); H01L 29/0873 (2013.01); H01L 29/41741 (2013.01); H01L 29/66712 (2013.01); H01L 27/11246 (2013.01);
Abstract
A device includes a cell, wherein each cell includes a body having a main top surface and a main bottom surface, a gate on the main surface on the device having a first length, a gate isolation layer over the gate having a second length at least twice as long as the first length, a source contact in the device body adjacent to the gate, a source metal layer over the gate isolation layer, and a drain on the main bottom surface of the cell.
Gao, Yang. (2021). Power device with low gate charge and low figure of merit (U.S. Patent No. 10957791). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10957791
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile