The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

May. 14, 2020
Applicant:

Government of the United States, As Represented BY the Secretary of the Air Force, Wright-Patterson AFB, OH (US);

Inventors:

Nicholas R. Glavin, Springboro, OH (US);

Kelson D. Chabak, Springboro, OH (US);

Michael R. Snure, Dayton, OH (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/0254 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01);
Abstract

Systems, methods and apparatus incorporating Gallium Nitride heterostructure (Al,In)GaN-materials in flexible, strainable and wearable radio frequency devices. These devices include (Al,In)GaN-based high-electron mobility transistors (HEMTs), which enable amplification of microwave radio frequencies from approximately 300 MHz to approximately 300 GHz for flexible and conformal wireless transmission.


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