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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10957765 B1

PDFFull Text
Date of Patent:
Mar. 23, 2021

Filed:

Aug. 01, 2018

Semiconductor devices having power rails

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Pan-Jae Park, Seongnam-si, KR;

Jae-Seok Yang, Hwaseong-si, KR;

Young-Hun Kim, Seoul, KR;

Hae-Wang Lee, Yongin-si, KR;

Kwan-Young Chun, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Stephen M Bradley

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 27/118 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/0886 (2013.01); H01L 27/11807 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 2027/11875 (2013.01); H01L 2027/11881 (2013.01);
Abstract

A semiconductor device is provided including a substrate, a first gate structure, a first contact plug and a power rail. The substrate includes first and second cell regions extending in a first direction, and a power rail region connected to each of opposite ends of the first and second cell regions in a second direction. The first gate structure extends in the second direction from a boundary area between the first and second cell regions to the power rail region. The first contact plug is formed on the power rail region, and contacts an upper surface of the first gate structure. The power rail extends in the first direction on the power rail region, and is electrically connected to the first contact plug. The power rail supplies a turn-off signal to the first gate structure through the first contact plug to electrically insulate the first and second cell regions.

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