The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Feb. 24, 2017
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

June Woo Lee, Yongin-si, KR;

Shin Moon Kang, Seoul, KR;

Byoung Ki Kim, Seoul, KR;

Hee Kyung Kim, Busan, KR;

Hyun Chui Son, Asan-si, KR;

Yun-Mo Chung, Yongin-si, KR;

Jae Beom Choi, Suwon-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 51/00 (2006.01); G02F 1/1333 (2006.01); G02F 1/1368 (2006.01); B60K 35/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); G02F 1/1368 (2013.01); G02F 1/133305 (2013.01); H01L 27/1218 (2013.01); H01L 27/1248 (2013.01); H01L 51/0097 (2013.01); B60K 35/00 (2013.01); B60K 2370/184 (2019.05); H01L 27/1251 (2013.01); H01L 27/3258 (2013.01); H01L 2227/323 (2013.01); H01L 2251/5338 (2013.01); Y02E 10/549 (2013.01);
Abstract

A display device includes a display panel including a flexible region and a low flexibility region, wherein the flexible region may include a first transistor including a first semiconductor layer and a first gate electrode, a first conductor connected to the first semiconductor layer, and a first interlayer insulating layer between the first transistor and the first conductor. The low flexibility region may include a second transistor including a second semiconductor layer and a second gate electrode, a second conductor connected to the second semiconductor layer, and a second interlayer insulating layer between the second transistor and the second conductor. The first interlayer insulating layer may include an organic insulating material, the second interlayer insulating layer includes an inorganic insulating material, and a ratio of channel width to channel length of the first transistor may be different from that of the second transistor.


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