The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Mar. 07, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Atsushi Oga, Yokkaichi Mie, JP;

Hideaki Harakawa, Yokkaichi Mie, JP;

Satoshi Nagashima, Yokkaichi Mie, JP;

Natsuki Fukuda, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/76224 (2013.01); H01L 27/11582 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract

According to an embodiment, a semiconductor memory device includes: a first stacked body including a first semiconductor layer, a first memory film, a second semiconductor layer and a first insulating layer; a joining member provided on the first semiconductor layer, the second semiconductor layer, and the first insulating layer; a first layer provided above the joining member and covering the first semiconductor layer and the first memory film; a second layer provided above the joining member, located away from the first layer as viewed in a second direction perpendicular to the first direction, and covering the second semiconductor layer and the second memory film; a second stacked body including a third semiconductor layer, a fourth semiconductor layer, a fourth memory film and a second insulating layer.


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