The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Jan. 31, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Kenji Noguchi, Kanagawa, JP;

Toshiyuki Koimori, Kanagawa, JP;

Hiroaki Nagano, Tokyo, JP;

Masaya Uemura, Tokyo, JP;

Megumi Nakayama, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 28/60 (2013.01);
Abstract

Provided is a semiconductor apparatus capable of enhancing the withstand voltage while suppressing the enlargement of the chip area. Provided is semiconductor apparatus including: a first terminal to which a high frequency signal is supplied; a second terminal from which the high frequency signal is output; first, second and third switch elements electrically connected in series between the first terminal and the second terminal; a first capacitor provided between the first terminal and a first node between the first switch element and the second switch element; and a second capacitor provided between the first terminal and a second node between the second switch element and the third switch element, in which the capacitance of the first capacitor is greater than the capacitance of the second capacitor.


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