The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Jun. 05, 2019
Sandisk Technologies Llc, Addison, TX (US);
SANDISK TECHNOLOGIES LLC, San Jose, CA (US);
Abstract
A dielectric spacer assembly including an annular dielectric isolation structure is formed through in-process source-level material layers. An alternating stack of insulating layers and spacer material layers is formed over the in-process source-level material layers. A contact via cavity is formed through the dielectric spacer assembly, and is filled within a dielectric spacer and a sacrificial via fill structure. The dielectric spacer assembly protects the dielectric spacer during replacement of a source-level sacrificial layer with a source contact layer. The sacrificial via fill structure is subsequently replaced with a through-memory-level contact via structure.