The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Jun. 25, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Benjamin D. Briggs, Waterford, NY (US);

Lawrence A. Clevenger, LaGrangeville, NY (US);

Michael Rizzolo, Albany, NY (US);

Terry A. Spooner, Clifton Park, NY (US);

Theodorus E. Standaert, Clifton Park, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/31 (2006.01); H01L 21/033 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/82 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01);
Abstract

A method of forming via openings that includes forming sidewall spacers on a plurality of mandrels that are overlying a hardmask layer that is present on an interlevel dielectric layer. Etching the hardmask layer using a portion of the sidewall spacers and the plurality of mandrels to form a first pillar of hardmask material. The interlevel dielectric layer is etched using the first pillar of hardmask material as a mask to define a first via opening. The plurality of mandrels are removed. The hardmask layer is etched using the spacers to define a second pillar of hardmask material. The interlevel dielectric layer is etched using the second pillar of hardmask material to provide a second via opening.


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