Self-calibration apparatus and method for real-time temperature measurement system of mocvd device

Abstract

A self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device belong to the technical field of semiconductor manufacturing. The apparatus comprises a MOCVD reactor chamber () and an optical detector (). The MOCVD reactor chamber () comprises an epitaxial wafer (). A detection window () is provided on the top of the MOCVD reactor chamber (). The optical detector () emits detection light beams whose wavelengths are respectively λand λtoward the epitaxial wafer () through the detection window (). The detection light beams are reflected by the epitaxial wafer () to form reflected light beams which are detected by the optical detector (). In the method, points corresponding to the actual thermal radiation ratios are depicted on the theoretical thermal radiation ratio-temperature curve according to actual thermal radiation ratios, and values of the temperatures T corresponding to the points are substituted into formulas to obtain mand mrespectively. With the method and apparatus, self-calibration of the real-time temperature measurement system of a MOCVD device is realized, thus ensuring consistent and accurate measurements of a growth temperature of the epitaxial wafer.