The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Mar. 26, 2019
Applicant:

Semikron Elektronik Gmbh & Co. KG, Nuremberg, DE;

Inventors:

Alexander Wehner, Nuremberg, DE;

Juergen Steger, Hiltpoltstein, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4882 (2013.01); H01L 23/367 (2013.01); H01L 23/3735 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/072 (2013.01); H01L 25/50 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/8384 (2013.01);
Abstract

The invention provides a pressure sintering method including: a) providing a sintered component arrangement with a workpiece carrier having recesses, with a substrate resting on a main surface of the workpiece carrier, wherein a sintering material to be sintered is arranged between the power semiconductor components and the substrate, a first power semiconductor component and a first region of the substrate arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a first recess of the workpiece carrier, and a second power semiconductor component and a second region of the substrate are arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a second recess of the workpiece carrier and a step of b) pressurizing the power semiconductor components and applying a temperature treatment.


Find Patent Forward Citations

Loading…