The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Aug. 09, 2019
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Haiyang Zhang, Shanghai, CN;
Erhu Zheng, Shanghai, CN;
Abstract
A semiconductor structure and a formation method thereof are provided. The formation method includes: providing a base, the base including a pattern dense region and a pattern isolated region; forming a plurality of separate hard mask layers on the base, where adjacent hard mask layers and the base define an opening, and an opening of the pattern isolated region is wider than an opening of the pattern dense region; forming a trimming layer at least on a side wall of the opening of the pattern isolated region, the trimming layer and the hard mask layer constituting a mask structure layer; and etching, using the mask structure layer as a mask, a portion of the thickness of the base exposed by the opening to form a plurality of target pattern layers protruding from the remaining base. Embodiments and implementations of the present disclosure are advantageous for improving a critical dimension uniformity of a target pattern layer in each region.