The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Jul. 24, 2019
Applicant:

(Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Chang Hwan Choi, Seoul, KR;

Yu Rim Jeon, Seoul, KR;

Hoon Hee Han, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/18 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/185 (2013.01); H01L 21/02013 (2013.01); H01L 21/02532 (2013.01); H01L 21/7624 (2013.01); H01L 29/78621 (2013.01);
Abstract

The present invention relates to a method of forming and transferring a thin film. The method of forming and transferring a thin film according to one embodiment may include a step of bonding a carrier wafer coated with a polymer bonding material to the top of a silicon-on-insulator (SOI) wafer formed by sequentially laminating a backside silicon layer, a buried oxide layer, and a silicon layer; a step of etching the backside silicon layer using the buried oxide layer as an etching barrier, and then selectively etching the buried oxide layer; a step of separating the carrier wafer from the polymer bonding material, and bonding a target wafer including an oxide layer to the bottom of the silicon layer through direct bonding; and a step of transferring the silicon layer to the top of the target wafer including the oxide layer by removing the polymer bonding material.


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