The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Apr. 30, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngman Ahn, Hwaseong-si, KR;

Sangyeol Lee, Suwon-si, KR;

Jonggeon Lee, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/44 (2006.01); G11C 29/46 (2006.01); G11C 29/12 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/4401 (2013.01); G11C 29/12005 (2013.01); G11C 29/12015 (2013.01); G11C 29/46 (2013.01); G11C 29/50008 (2013.01); G11C 2029/4402 (2013.01);
Abstract

A method and a memory device for testing and repairing memory cells during a power-up sequence are provided. The memory device includes a built-in self test (BIST) unit for testing a memory cell array during the power-up sequence. The BIST unit performs a test on the memory cell array in response to a power stabilization signal, or performs a test on the memory cell array in response to an impedance control (ZQ) calibration command. The BIST unit terminates a test being performed in response to a write leveling command, or terminates a test being performed in response to an active command.


Find Patent Forward Citations

Ahn, Youngman. (2021). Method of test and repair of memory cells during power-up sequence of memory device (U.S. Patent No. 10957414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10957414

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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