The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

May. 31, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Keun Hwi Cho, Seoul, KR;

Seunghan Park, Gunpo-si, KR;

Hyo-Jin Kim, Gunpo-si, KR;

Gukil An, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 29/51 (2006.01); H01L 27/11502 (2017.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 11/2255 (2013.01); G11C 11/2257 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); G11C 11/2297 (2013.01); H01L 27/11502 (2013.01); H01L 29/516 (2013.01);
Abstract

A semiconductor memory device includes a memory cell array including memory cells, a row decoder connected to the memory cell array through first conductive lines, write drivers and sense amplifiers connected to the memory cell array through second conductive lines, a voltage generator that supplies a first voltage to the row decoder and supplies a second voltage to the write drivers and sense amplifiers, and a data buffer that is connected to the write drivers and sense amplifiers and transfers data between the write drivers and sense amplifiers and an external device. At least one of the row decoder, the write drivers and sense amplifiers, the voltage generator, and the data buffer includes a first ferroelectric capacitor to amplify a voltage.


Find Patent Forward Citations

Loading…