The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Feb. 26, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yorinobu Fujino, Kanagawa, JP;

Kosuke Hatsuda, Tokyo, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G06F 3/06 (2006.01); G11C 8/14 (2006.01); G11C 8/10 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0688 (2013.01); G11C 8/10 (2013.01); G11C 8/14 (2013.01); G11C 17/18 (2013.01);
Abstract

A semiconductor storage device comprises first and second memory cells each including a variable-resistance element, a write driver, and a control circuit that concurrently performs an operation to read first data in the first memory cell and second data in the second memory cell, the operation to read the first data including a first write operation for a first time length and the operation to read the second data including a second write operation for a second time length. In the first write operation, the write driver applies, to the first memory cell, a first voltage for a third time length and a second voltage different from the first voltage for a fourth time length. In the second write operation, the write driver applies the first voltage to the second memory cell for a fifth time length longer than the third time length and longer than the fourth time length.


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