The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Mar. 17, 2015
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Chris G. M. de Ridder, Almere, NL;

Lucian C. Jdira, Almere, NL;

Bert Jongbloed, Almere, NL;

Jeroen A. Smeltink, Almere, NL;

Assignee:

ASM IP HOLDING B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/458 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C30B 25/14 (2006.01); C30B 25/16 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); F16J 15/43 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4584 (2013.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/45525 (2013.01); C23C 16/45548 (2013.01); C23C 16/45551 (2013.01); C23C 16/45561 (2013.01); C23C 16/45563 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); H01J 37/3244 (2013.01); H01J 37/32513 (2013.01); H01L 21/0228 (2013.01); F16J 15/43 (2013.01); H01J 2237/20214 (2013.01);
Abstract

An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.


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