The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
May. 09, 2019
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Osaka University, Suita, JP;
Nichia Corporation, Anan, JP;
Tsukasa Torimoto, Nagoya, JP;
Tatsuya Kameyama, Nagoya, JP;
Hiroki Yamauchi, Nagoya, JP;
Chie Miyamae, Nagoya, JP;
Yuki Mori, Nagoya, JP;
Susumu Kuwabata, Ibaraki, JP;
Taro Uematsu, Suita, JP;
Daisuke Oyamatsu, Tokushima, JP;
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM, Nagoya, JP;
OSAKA UNIVERSITY, Osaka, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
A method of producing semiconductor nanoparticles, semiconductor nanoparticles, and a light-emitting device are provided. The method includes heat-treating a mixture containing a salt of Ag, a salt containing at least one of In and Ga, an Se supply source, and an organic solvent at a temperature in the range of above 200° C. to 370° C. In the method, the ratio of the number of Ag atoms to the total number of In and Ga atoms in the mixture is above 0.43 to 2.5. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. The light-emitting device includes a light conversion member containing the semiconductor nanoparticles and a semiconductor light-emitting element.