The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
May. 06, 2019
Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Hubei, CN;
Jiajia Luo, Hubei, CN;
Xianjie Li, Hubei, CN;
Yu Gu, Hubei, CN;
Jinchang Huang, Hubei, CN;
Xu Wang, Hubei, CN;
WUHAN CHINA STAR OPTOELECTRONICS, Hubei, CN;
SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Hubei, CN;
Abstract
A thermal active delay fluorescent material includes a structural formula in formula 1: The application adopts a strong electron-withdrawing group of a large conjugate plane as an electron acceptor, and combines an electron acceptor with a strong electron donor to achieve a deep red light thermal active delay fluorescent material with a typical TADF characteristics and a low energy level. The thermal active delay fluorescent material of the application is a deep red light TADF material having a lower single triplet energy level difference, an ultrafast reverse intersystem crossing speed and a high luminous efficiency, and when it is used as a luminescent material for an organic light-emitting diode device, it can promote a luminous efficiency of the organic light-emitting diode device.