The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Sep. 21, 2018
Applicant:
General Electric Company, Schenectady, NY (US);
Inventors:
Krishan Lal Luthra, Niskayuna, NY (US);
Gregory Scot Corman, Ballston Lake, NY (US);
Badri Narayan Ramamurthi, Clifton Park, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/08 (2006.01); C04B 35/80 (2006.01); C04B 35/573 (2006.01); B32B 5/02 (2006.01); B32B 7/02 (2019.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); B05D 3/10 (2006.01); B32B 5/18 (2006.01);
U.S. Cl.
CPC ...
C04B 35/806 (2013.01); B05D 3/108 (2013.01); B32B 5/024 (2013.01); B32B 5/18 (2013.01); B32B 7/02 (2013.01); C04B 35/573 (2013.01); C23C 16/0227 (2013.01); C23C 16/045 (2013.01); B32B 2262/105 (2013.01); B32B 2305/076 (2013.01); B32B 2603/00 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/422 (2013.01); C04B 2235/428 (2013.01); C04B 2235/5244 (2013.01); C04B 2235/5268 (2013.01); C04B 2235/614 (2013.01); C04B 2235/616 (2013.01); C04B 2235/721 (2013.01); C04B 2235/728 (2013.01); C04B 2235/96 (2013.01); C04B 2235/9607 (2013.01);
Abstract
A ceramic matrix composite article includes a melt infiltration ceramic matrix composite substrate comprising a ceramic fiber reinforcement material in a ceramic matrix material having a free silicon proportion, and a chemical vapor infiltration ceramic matrix composite outer layer comprising a ceramic fiber reinforcement material in a ceramic matrix material having essentially no free silicon proportion disposed on an outer surface of at least a portion of the substrate.