The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Feb. 21, 2017
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Yosuke Horiuchi, Ota Tokyo, JP;

Shinya Sakurada, Shinagawa Tokyo, JP;

Masaya Hagiwara, Yokohama Kanagawa, JP;

Tadahiko Kobayashi, Yokohama Kanagawa, JP;

Toshihide Takahashi, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 1/055 (2006.01); B22F 9/04 (2006.01); B22F 3/16 (2006.01); B22F 3/24 (2006.01); H02K 1/02 (2006.01); C22C 19/07 (2006.01); C22C 1/02 (2006.01); B22D 7/00 (2006.01); B22D 25/06 (2006.01); C22C 30/02 (2006.01); C22F 1/10 (2006.01); H02K 1/27 (2006.01); H02K 7/00 (2006.01); H02K 7/18 (2006.01); H01F 1/059 (2006.01);
U.S. Cl.
CPC ...
H02K 1/02 (2013.01); B22D 7/00 (2013.01); B22D 25/06 (2013.01); B22F 3/16 (2013.01); B22F 3/24 (2013.01); B22F 9/04 (2013.01); C22C 1/02 (2013.01); C22C 19/07 (2013.01); C22C 30/02 (2013.01); C22F 1/10 (2013.01); H01F 1/055 (2013.01); H01F 1/0557 (2013.01); H02K 1/276 (2013.01); H02K 7/003 (2013.01); H02K 7/1823 (2013.01); B22F 2003/248 (2013.01); B22F 2009/044 (2013.01); B22F 2202/05 (2013.01); B22F 2301/15 (2013.01); B22F 2998/10 (2013.01); B22F 2999/00 (2013.01); H01F 1/0596 (2013.01);
Abstract

A permanent magnet is expressed by a composition formula: RFeMCuCo. The magnet comprises a metal structure including a main phase having a ThZncrystal phase and a grain boundary phase. The main phase includes a cell phase having the ThZncrystal phase and a Cu-rich phase. A section including a c-axis of the ThZncrystal phase has a first region in the crystal grain and a second region in the crystal grain, the first region is provided in the cell phase divided by the Cu-rich phase, the second region is provided within a range of not less than 50 nm nor more than 200 nm from the grain boundary phase in a direction perpendicular to an extension direction of the grain boundary phase, and a difference between a Cu concentration of the first region and a Cu concentration of the second region is 0.5 atomic percent or less.


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