Semiconductor device increasing light output

Abstract

An embodiment discloses a semiconductor device comprising: a light-emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed below the second conductive semiconductor layer; and a current blocking layer disposed between the second conductive semiconductor layer and the second electrode, wherein the first conductive semiconductor layer includes a first region in which the first electrode is disposed and a second region, the thickness of which is less than the thickness of the first region, and the current blocking layer is disposed in a region corresponding to the first region in the thickness direction.