The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Feb. 22, 2017
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Werner Bergbauer, Windberg, DE;
Thomas Lehnhardt, Regensburg, DE;
Jürgen Off, Regensburg, DE;
Lise Lahourcade, Regensburg, DE;
Philipp Drechsel, Regensburg, DE;
OSRAM OLED GmbH, Regensburg, DE;
Abstract
A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.