The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Feb. 02, 2018
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Marco Englhard, Illschwang, DE;
OSRAM OLED GMBH, Regensburg, DE;
Abstract
A method for producing a plurality of optoelectronic components are disclosed. In an embodiment, the method includes providing a substrate, epitaxially applying a sacrificial layer on the substrate, wherein the sacrificial layer has a layer thickness greater than 300 nm and comprises AlGaAs with 0<x≤1, epitaxially applying a semiconductor layer sequence on the sacrificial layer, forming trenches extending in a vertical direction through the semiconductor layer sequence to the sacrificial layer such that a plurality of regions in the semiconductor layer sequence is formed and wet thermally oxidizing the sacrificial layer such that the substrate is non-destructively removable from the semiconductor layer sequence, wherein the sacrificial layer comprises at least three and optionally four sublayers in a direction facing away from the substrate, a first sublayer comprising InGaAlP, a second sublayer comprising GaAs, a third sublayer comprising AlGaAs with 0<x≤1 and a fourth sublayer comprising GaAs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile