The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Mar. 16, 2017
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Yuki Yanagisawa, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 21/324 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7849 (2013.01); H01L 21/324 (2013.01); H01L 21/3247 (2013.01); H01L 27/12 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/66568 (2013.01); H01L 29/786 (2013.01); H01L 29/7833 (2013.01); H01L 29/7843 (2013.01); H01L 21/266 (2013.01); H01L 21/26533 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/76243 (2013.01); H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 29/665 (2013.01);
Abstract
The semiconductor device according to the present technology includes a hollow region or an insulating region. The hollow region or the insulating region is provided under a channel that is formed between a source of a first semiconductor type and a drain of the first semiconductor type in a body region of a second semiconductor type in a transistor, the body region being provided between the source and the drain.