The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Nov. 17, 2016
Applicant:
Denso Corporation, Kariya, JP;
Inventor:
Kazuhiro Oyama, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 27/04 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 27/04 (2013.01); H01L 29/1602 (2013.01); H01L 29/423 (2013.01); H01L 29/4908 (2013.01); H01L 29/51 (2013.01); H01L 29/7813 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/513 (2013.01);
Abstract
In a semiconductor device with a wide gap semiconductor, a gate insulating film is made of a material having a barrier against a minor carrier in an n-type body layer and having no barrier against a minor carrier in a p-type drift layer. As a result, in the semiconductor device with the wide gap semiconductor, a reduction in a conduction loss can be achieved while realizing an improvement in blocking resistance and securing reliability of the gate insulating film.