The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Feb. 06, 2018
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventor:

Tadayoshi Miyamoto, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42384 (2013.01); G02F 1/1368 (2013.01); H01L 27/1225 (2013.01); H01L 27/3241 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01);
Abstract

An active matrix substrate includes a peripheral circuit including a TFT (A) supported on a substrate (). When viewed in a direction normal to the substrate (), a first gate electrode () of the TFT (A) includes a first edge portion and a second edge portion () opposing each other. The first edge portion and the second edge portion extend across an oxide semiconductor layer () in a channel width direction. At least one of the first edge portion and the second edge portion includes, in a region overlapping with the oxide semiconductor layer (), a first recess portion () recessed in a channel length direction and a first part () adjacent to the first recess portion in the channel width direction. When viewed in the direction normal to the substrate (), a source electrode () or a drain electrode () of the TFT (A) overlaps with at least a part of the first recess portion () and at least a part of the first part ().


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