The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Jun. 14, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung-Jun Shin, Yongin-si, KR;

Si-Wan Kim, Hwaseong-si, KR;

Bong-Hyun Choi, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 23/48 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 23/481 (2013.01); H01L 27/11582 (2013.01); H01L 29/4234 (2013.01);
Abstract

A vertical memory device includes a substrate including a cell array region and a staircase region surrounding the cell array region, gate electrodes on the cell array region and the staircase region, and a channel on the cell array region. The gate electrodes are isolated from each other in first and third directions and each extend in a second direction. The channel extends in the first direction through one or more gate electrodes. End portions in the second direction of first gate electrodes of the plurality of gate electrodes define first steps in the second direction and second steps in the third direction on the staircase region of the substrate, the second steps being connected to the first steps, respectively, at same levels.


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